schottky barrier diode 0 8/0 4 /2007 rev.1.00 www.siliconstandard.com 1 B5817W-b5819w product summary sod-123 plastic-encapsulate diode features for use in low voltage, high frequency inverters free wheeling, and polarity protection applications. marking: B5817W: sj b5818w: sk b5819w: sl maximum ratings and electrical characteristics single diode @t a =25 o c pb-free; rohs-compliant sod-123 + - para mete r symbol b581 7w b581 8w b581 9w unit no n - rep e titi v e peak r e v e rs e v o lt ag e v rm 20 30 40 v peak r e p e titi v e peak r e v e rs e v o lt ag e w o rkin g peak re v e rse v o lt ag e dc blo ckin g v o lt ag e v rrm v rw m v r 20 30 40 v rms re v e rs e v o lt ag e v r(rms ) 14 21 28 v a v e r ag e r ecti f ied ou tp u t c u rren t i o 1 a peak fo r w ard su rg e cu rren t @= 8.3ms i fsm 25 a re pe titi v e pea k for w a rd c u rre nt i frm 625 ma po w e r dissip a tio n pd 250 mw t h e rmal re sist an ce ju n c tio n to am b i e n t r ja 500 k/w s t o rag e temp eratu re t st g -65~ + 150
0 8/0 4 /2007 rev.1.00 www.siliconstandard.com 2 B5817W-b5819w electrical characteristics (tamb=25 o c unless otherwise specified) pa ra me ter sy mbol t e s t c onditi ons min m a x unit re v e rs e b rea kd o w n v o lt ag e v (b r) i r = 1 m a b581 7w b581 8w b581 9w 20 30 40 v re v e rs e v o lt a g e leakag e cu rren t i r v r = 20v b581 7w v r = 30v b581 8w v r = 40v b581 9w 1 ma b581 7w i f =1 a i f =3 a 0.45 0.75 v b581 8w i f =1 a i f =3 a 0.55 0.875 v for w a rd v o lt age v f b581 9w i f =1 a i f =3 a 0.6 0.9 v dio d e cap acit a n ce c d v r = 4 v , f= 1mhz 120 pf
08/04 /2007 rev.1.00 www.siliconstandard.com 3 typical characteristics B5817W-b5819w
B5817W-b5819w 08/04 /2007 rev.1.00 www.siliconstandard.com 4 information furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties.
|
